Semiconductor device fundamentals

By:

Pierret, Robert F

Material type: Text

9788177589771

Subject(s):

DDC classification:

621.381 PIE-S

Contents:

PART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures.

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Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode	Item holds
Books	IIITD General Stacks	Electronics and Communication Engineering	621.381 PIE-S (Browse shelf(Opens below))	Available		012816

Total holds: 0

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Includes bibliographical references and index.

PART I: SEMICONDUCTOR FUNDAMENTALS.

Semiconductors -- A General Introduction.

Carrier Modeling.

Carrier Action.

Basics of Device Fabrication.
PART II: A. PN JUNCTION DIODES.

PN Junction Electrostatics.

PN Junction Diode -- I-V Characteristics.

PN Junction Diode -- Small-Signal Admittance.

PN Junction Diode -- Transient Response.

Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES.

BJT Fundamentals.

BJT Static Characteristics.

BJT Dynamic Response Modeling.

PNPN Devices.

MS Contacts and Schottky Diodes.
PART IV: FIELD EFFECT DEVICES.

Field Effect Introduction -- the J-FET and MESFET.

MOS Fundamentals.

MOSFETs -- The Essentials.

Nonideal MOS.

Modern FET Structures.

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