Semiconductor device fundamentals
Pierret, Robert F.
Semiconductor device fundamentals by Robert F. Pierret. - New Delhi : Pearson, ©2023 - xxii, 792 p. : ill. ; 24 cm.
Includes bibliographical references and index.
PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
9788177589771
Semiconductors
Engineering
621.381 / PIE-S
Semiconductor device fundamentals by Robert F. Pierret. - New Delhi : Pearson, ©2023 - xxii, 792 p. : ill. ; 24 cm.
Includes bibliographical references and index.
PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
9788177589771
Semiconductors
Engineering
621.381 / PIE-S