| 000 | 01009cam a22003134a 4500 | ||
|---|---|---|---|
| 001 | 16538095 | ||
| 003 | IIITD | ||
| 005 | 20240430020003.0 | ||
| 008 | 101115s2012 nyua 001 0 eng | ||
| 010 | _a 2010045765 | ||
| 020 | _a9780071070102 | ||
| 035 | _a(OCoLC)ocn681739179 | ||
| 040 |
_aDLC _cDLC _dCDX _dYDXCP _dCLE _dSTF _dDLC |
||
| 042 | _apcc | ||
| 050 | 0 | 0 |
_aQC611 _b.N39 2012 |
| 082 | 0 | 0 |
_a537.622 _222 _bNEA-S |
| 100 | _aNeamen, Donald A. | ||
| 245 | 1 | 0 |
_aSemiconductor physics and devices : _bbasic principles _cby Donald A. Neamen. |
| 250 | _a4th ed. | ||
| 260 |
_aNew York : _bMcGraw Hill, _c©2012. |
||
| 300 |
_axxiv, 758 p. : _bill. ; _c24 cm. |
||
| 500 | _aIncludes index. | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 | _aSemiconductors. | |
| 700 | _aBiswas, Dhrubes | ||
| 906 |
_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg |
||
| 942 |
_2ddc _cBK _020 |
||
| 999 |
_c170614 _d170614 |
||