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Nanoscale transistors : device physics, modeling and simulation

By: Lundstrom, Mark.
Contributor(s): Guo, Jing.
Material type: materialTypeLabelBookPublisher: New York : Springer, c2006Description: vi, 217 p. : ill. ; 24 cm.ISBN: 9788181288554.Subject(s): Nanotechnology | Metal oxide semiconductor field-effect transistors -- Mathematical models | Nanostructured materials -- Mathematical modelsOnline resources: Table of contents only | Publisher description | Contributor biographical information
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Electronics and Communication Engineering REF 621.381 LUN-N (Browse shelf) Not for loan 007165

Introduction to Nanoelectronics UG/PG Monsoon

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Electronics and Communication Engineering 621.381 LUN-N (Browse shelf) Available 002596
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Includes bibliographical references and index.

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