Fundamentals of tunnel field-effect transistors

By:

Saurabh, Sneh

Contributor(s):

Kumar, Mamidala Jagadesh

Material type: Text

9781498767132

Subject(s):

DDC classification:

621.3815 23 SAU-F

LOC classification:

TK7871.95 .S28 2017

Summary: "During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator"--

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Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode	Item holds
Books	IIITD Reference	Electronics and Communication Engineering	REF 621.3815 SAU-F (Browse shelf(Opens below))	Loan on demand		007942

Total holds: 0

Browsing IIITD shelves, Shelving location: Reference, Collection: Electronics and Communication Engineering Close shelf browser (Hides shelf browser)

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Previous	REF 621.3815 RAZ-D Design of CMOS phase-locked loops :	REF 621.3815 ROS-C CMOS sigma-delta converters :	REF 621.3815 SAR-S Solid state microelectronic and optoelectronic devices	REF 621.3815 SAU-F Fundamentals of tunnel field-effect transistors	REF 621.3815 SED-M Laboratory explorations to accompany microelectronic circuits	REF 621.3815 SEL-F Formal verification :	REF 621.3815 TIE-E Electronic circuits :	Next

Includes bibliographical references and index.

"During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator"--

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