| 000 | 01429nam a22002177a 4500 | ||
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| 003 | IIITD | ||
| 005 | 20240502111937.0 | ||
| 008 | 240409b xxu||||| |||| 00| 0 eng d | ||
| 020 | _a9788177589771 | ||
| 040 | _aIIITD | ||
| 082 |
_a621.381 _bPIE-S |
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| 100 | _aPierret, Robert F. | ||
| 245 |
_aSemiconductor device fundamentals _cby Robert F. Pierret. |
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| 260 |
_aNew Delhi : _bPearson, _c©2023 |
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| 300 |
_axxii, 792 p. : _bill. ; _c24 cm. |
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| 500 | _aIncludes bibliographical references and index. | ||
| 505 |
_tPART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
_tPART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. _tPART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. _tPART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. |
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| 650 | _aSemiconductors | ||
| 650 | _aEngineering | ||
| 942 |
_2ddc _cBK |
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| 999 |
_c172570 _d172570 |
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