| 000 | 00821nam a22002297a 4500 | ||
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| 003 | IIITD | ||
| 005 | 20221012181405.0 | ||
| 008 | 220225b xxu||||| |||| 00| 0 eng d | ||
| 040 | _aIIITD | ||
| 082 | _aREF ECE 2022 | ||
| 100 | _aGarg, Shelly | ||
| 245 |
_aNanoscale tunnel field-effect transistors for digital circuit applications : _bdesign and analysis _cby Shelly Garg, Sneh Saurabh (Advisor) |
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| 260 |
_aNew Delhi : _bIIIT-Delhi, _c©2022 |
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| 300 |
_axxv, 189 p. : _bill. ; _c29 cm. |
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| 500 | _aThis thesis includes bibliographical references. | ||
| 650 | _aStructure of a TFET | ||
| 650 | _aTunnel Field-Effect Transistors | ||
| 650 | _aDigital Circuit Applications | ||
| 700 |
_aSaurabh, Sneh _eAdvisor |
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| 856 | _uhttps://shodhganga.inflibnet.ac.in/handle/10603/376647 | ||
| 942 |
_2ddc _cTH |
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| 999 |
_c156944 _d156944 |
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