000			01850cam a2200325 i 4500
001			19160036
003			IIITD
005			20200317020002.0
008			160629s2017 flu b 001 0 eng c
010			_a 2016022619
020			_a9781498767132
040			_aOU/DLC _beng _cOU _erda _dDLC
042			_apcc
050	0	0	_aTK7871.95 _b.S28 2017
082	0	0	_a621.3815 _223 _bSAU-F
100	1		_aSaurabh, Sneh
245	1	0	_aFundamentals of tunnel field-effect transistors _cSneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India.
260			_aBoca Raton : _bCRC Press, _c©2017.
300			_axiv, 291 p. ; _c24 cm.
504			_aIncludes bibliographical references and index.
520			_a"During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator"--
650		0	_aTunnel field-effect transistors.
650		0	_aIntegrated circuits _xDesign and construction.
650		0	_aNanostructured materials.
650		0	_aLow voltage integrated circuits.
700	1		_aKumar, Mamidala Jagadesh
906			_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg
942			_2ddc _cBK _04
999			_c13720 _d13720