Nanometer variation-tolerant SRAM : circuits and statistical design for yield
Material type: TextPublication details: Springer, ©2013 New York :Description: xvi, 170 p. : ills. ; 24cmISBN:- 9781493902200
- 621.397 ABU-N
Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Books | IIITD Reference | Electronics and Communication Engineering | REF 621.397 ABU-N (Browse shelf(Opens below)) | Not for loan | 009736 |
Total holds: 0
Browsing IIITD shelves, Shelving location: Reference, Collection: Electronics and Communication Engineering Close shelf browser (Hides shelf browser)
REF 621.395 WAN-V VLSI test principles and architectures : | REF 621.395 WES-C CMOS VLSI design : | REF 621.395 WES-C CMOS VLSI design : | REF 621.397 ABU-N Nanometer variation-tolerant SRAM : | REF 621.397 BOS-A Advanced test methods for SRAMs : | REF 621.397 LEE-D Design of CMOS radio-frequency integrated circuits | REF 621.397 UYE-C CMOS logic circuit design |
Includes bibliography and index
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