Nanoscale transistors :
Lundstrom, Mark
Nanoscale transistors : device physics, modeling and simulation Mark S. Lundstrom, Jing Guo. - New York : Springer, c2006. - vi, 217 p. : ill. ; 24 cm.
Includes bibliographical references and index.
9788181288554
2005933746
GBA581849 bnb
013301275 Uk
Nanotechnology.
Metal oxide semiconductor field-effect transistors--Mathematical models.
Nanostructured materials--Mathematical models.
T174.7 / .L86 2006
621.381 / LUN-N
Nanoscale transistors : device physics, modeling and simulation Mark S. Lundstrom, Jing Guo. - New York : Springer, c2006. - vi, 217 p. : ill. ; 24 cm.
Includes bibliographical references and index.
9788181288554
2005933746
GBA581849 bnb
013301275 Uk
Nanotechnology.
Metal oxide semiconductor field-effect transistors--Mathematical models.
Nanostructured materials--Mathematical models.
T174.7 / .L86 2006
621.381 / LUN-N