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Lundstrom, Mark

Nanoscale transistors : device physics, modeling and simulation Mark S. Lundstrom, Jing Guo. - New York : Springer, c2006. - vi, 217 p. : ill. ; 24 cm.

Includes bibliographical references and index.

9788181288554

2005933746

GBA581849 bnb

013301275 Uk


Nanotechnology.
Metal oxide semiconductor field-effect transistors--Mathematical models.
Nanostructured materials--Mathematical models.

T174.7 / .L86 2006

621.381 / LUN-N

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